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     2003 May 01 2 NXP Semiconductors Product data sheet Schottky barrier diode BAT960 FEATURES ? High current capability ? Very low forward voltage ? Ultra small plastic SMD package ? Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS ? Ultra high-speed switching ? rectification ? DC/DC conversion ? Switch mode power supply ? Inverse polarity protection. GENERAL DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package. PINNING PIN DESCRIPTION 1 cathode 2 cathode 3 anode 4 anode 5 cathode 6 cathode handbook, halfpage6 123 4 5 1, 2 5, 6 3, 4 MHC310 Fig.1 Simplified outline (SOT666) and symbol. Marking code: B9. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Only valid, if pins 3 and 4 are connected in parallel. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage ? 23 V IF continuous forward current ? 1 A IFSM non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC method; note 1 ? 8 A Tstg storage temperature ?65 +150 °C Tj junction temperature ? 125 °C Tamb operating ambient temperature ?65 +125 °C |